50714 tkim tc-00003062/20608pe tiim tc-00001164 no.a1039-1/5 http://onsemi.com semiconductor components industries, llc, 2014 may, 2014 6hp04ch p-channel small single mosfet ? 60v, ? 370ma, 4.2 , single cph3 features ? 4v drive ? halogen free compliance ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain to source voltage v dss --60 v gate to source voltage v gss 20 v drain current (dc) i d --370 ma drain current (pulse) i dp pw 10 s, duty cycle 1% --1480 ma allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 0.6 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain to source breakdown voltage v (br)dss i d =--1ma, v gs =0v --60 v zero-gate voltage drain current i dss v ds =--60v, v gs =0v --1 a gate to source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--10v, i d =--100 a --1.2 --2.6 v forward transfer admittance | yfs | v ds =--10v, i d =--190ma 310 ms static drain to source on-state resistance r ds (on)1 i d =--190ma, v gs =--10v 3.1 4.2 r ds (on)2 i d =--100ma, v gs =--4v 5.1 7.3 input capacitance ciss v ds =--20v, f=1mhz 24.1 pf output capacitance coss 8.5 pf reverse transfer capacitance crss 4.1 pf turn-on delay time t d (on) see speci ed test circuit. 18.4 ns rise time t r 15.2 ns turn-off delay time t d (off) 113 ns fall time t f 41 ns total gate charge qg v ds =--30v, v gs =--10v, i d =--370ma 0.84 nc gate to source charge qgs 0.19 nc gate to drain ?miller? charge qgd 0.21 nc diode forward voltage v sd i s =--370ma, v gs =0v --0.92 --1.2 v ordering number : ena1039a ordering information see detailed ordering and shipping information on page 4 of this data sheet. product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
6hp04ch no.a1039-2/5 r ds (on) -- v gs gate to source voltage, v gs -- v static drain to source on-state resistance, r ds (on) -- ambient temperature, ta -- c r ds (on) -- ta static drain to source on-state resistance, r ds (on) -- i d -- v gs drain current, i d -- m a gate to source voltage, v gs -- v drain to source voltage, v ds -- v i d -- v ds drain current, i d -- m a 0 0 --100 --200 --400 -- 0 . 4 --300 -- 0 . 8 -- 1 . 0 -- 1 . 2 -- 1 . 4 -- 1 . 6 -- 0 . 2 -- 0 . 6 v gs = --3v --4.0v --4.5v 0 0 --100 -- 5 0 --150 --200 -- 1 --250 --300 --350 --400 -- 3 -- 2 -- 4 -- 5 v ds = --10v it17336 it17337 --25 c 25 c ta=75 c --6.0v --10.0v -- 6 0 0 6 4 2 8 10 12 14 --40 --20 0 20 40 60 80 100 120 140 160 v gs = --4v, i d = - -100ma v gs = --10v, i d = --190ma it17339 0 8 -- 2 10 -- 4 12 -- 6 -- 8 14 0 2 4 6 -- 1 0 -- 1 2 -- 1 6 -- 1 4 -- 1 8 -- 2 0 ta=25 c i d = --100ma --190ma it17338 --12.0v i s -- v sd source current, i s -- m a diode forward voltage, v sd -- v drain current, i d -- m a | yfs | -- i d forward transfer admittance, | y fs | -- ms -- 1 -- 0 . 6 -- 0 . 8 -- 1 . 0 -- 1 . 2 -- 0 . 2 0--0.4 -- 1 0 2 7 5 3 2 --100 2 7 5 3 --1000 7 5 3 v gs =0v -- 1 1 -- 1 0 23 57 23 57 2 --100 --1000 357 10 100 2 7 5 3 2 7 5 3 1000 2 7 5 3 v ds = --10v it17340 it17341 ta= --25 c --25 c 25 c ta=75 c 75 c 25 c ciss, coss, crss -- v ds ciss, coss, crss -- pf drain to source voltage, v ds -- v sw time -- i d switching time, sw time -- ns drain current, i d -- a 0 1 -- 1 5 -- 5 10 7 5 100 7 5 3 2 3 2 -- 2 0 -- 1 0 -- 2 5 -- 3 0 f=1mhz it17343 ciss coss crss -- 0 . 1 10 1 2 --1 --10 22 357 357 2 7 5 3 100 7 5 3 2 1000 7 5 3 it17342 t d(on) t r v dd = --30v v gs = --10v t f t d(off)
6hp04ch no.a1039-3/5 0 0 0.2 -- 1 -- 2 0.4 -- 3 -- 4 0.6 -- 5 -- 6 -- 7 0.8 -- 8 1.0 -- 9 -- 1 0 v ds = --30v it17344 it17346 it17345 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w s o a drain to source voltage, v ds -- v drain current, i d -- a total gate charge, qg -- nc v gs -- qg gate to source voltage, v gs -- v 0 0 20 0.1 0.3 40 60 0.6 0.2 0.5 0.4 80 0.7 0.8 140 100 120 160 --0.01 -- 0 . 1 -- 1 . 0 --0.001 2 3 5 7 2 3 5 7 2 3 7 5 -- 1 0 2 3 7 5 --0.01 23 57 -- 0 . 1 23 57 -- 1 0 23 57 -- 1 0 0 23 57 -- 1 1ms 10ms 100ms dc o peration 100 s i dp = --1480ma (pw 10 s) i d = --370ma operation in this area is limited by r ds (on). ta=25 c single pulse when mounted on ceramic substrate (900mm 2 ? 0.8mm) when mounted on ceramic substrate (900mm 2 ? 0.8mm)
6hp04ch no.a1039-4/5 package dimensions 6HP04CH-TL-W cph3 case 318ba issue o unit : mm 1: gate 2: source 3: drain land patte rn example ordering & package information packing type:tl mar king device package shipping memo 6HP04CH-TL-W cph3, sc-59 sot-23, to-236 3,000 pcs. / reel pb-free and halogen free electrical connection switching time test circuit 0.6 2.4 0.95 0.95 1.4 tl 1 2 3 ww lot no. pw 10 s d.c. 1% p. g 50 g s d i d = --190ma r l =154 rg v dd = --30v v out 6hp04ch v in 0v --10v v in rg=5k
6hp04ch ps no.a1039-5/5 on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner. note on usage : since the 6hp04ch is a mosfet product, please avoid using this device in the vicinity of highly charged objects.
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